GaN (gallium nitride) devices are a type of semiconductor technology that utilize gallium nitride as the base material for their construction. GaN devices are known for their high electron mobility and ability to operate at high frequencies, making them suitable for a wide range of applications including power electronics, RF amplifiers, and optoelectronic devices. GaN devices have demonstrated superior performance compared to traditional silicon-based devices, with higher efficiency, lower power consumption, and better thermal conductivity. As a result, GaN devices are gaining popularity in various industries due to their potential to improve the efficiency and performance of electronic devices.